TSV-Cu protrusion induced by thermal cycling test

Chen Si, Q. Fei, Z. Jingyi, An Tong
{"title":"TSV-Cu protrusion induced by thermal cycling test","authors":"Chen Si, Q. Fei, Z. Jingyi, An Tong","doi":"10.1109/ICEPT.2016.7583316","DOIUrl":null,"url":null,"abstract":"Current densities of 1.5ASD and additive concentrations of 15ml/L were used to electroplate the copper into TSV to fabricate the test samples. The samples were annealed at 425°C for 30 minutes in a vacuum furnace with the heating rate of 10°C /min. The annealed samples were thermal cycled with temperature range (25~325°C), heating & cooling rate (10 °C/min), dwell time of 2 min at the peak and bottom temperature in each cycle. The copper protrusion and microstructure evolution are examined during the thermal cycling. The results show that, the protrusion value increases gradually with the thermal cycling number increases, and reaches stable value of 2.152μm after the cycling number increases to 30 cycles. The average copper grain size grows larger as the thermal cycling number accumulates, suggesting grain growth occurs during the thermal cycling. The sample with greater copper grain size has a greater protrusion after the thermal cycling test.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"14 1","pages":"1095-1098"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2016.7583316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Current densities of 1.5ASD and additive concentrations of 15ml/L were used to electroplate the copper into TSV to fabricate the test samples. The samples were annealed at 425°C for 30 minutes in a vacuum furnace with the heating rate of 10°C /min. The annealed samples were thermal cycled with temperature range (25~325°C), heating & cooling rate (10 °C/min), dwell time of 2 min at the peak and bottom temperature in each cycle. The copper protrusion and microstructure evolution are examined during the thermal cycling. The results show that, the protrusion value increases gradually with the thermal cycling number increases, and reaches stable value of 2.152μm after the cycling number increases to 30 cycles. The average copper grain size grows larger as the thermal cycling number accumulates, suggesting grain growth occurs during the thermal cycling. The sample with greater copper grain size has a greater protrusion after the thermal cycling test.
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热循环试验诱导TSV-Cu突出
电流密度为1.5ASD,添加剂浓度为15ml/L,将铜电镀到TSV中制备测试样品。样品在真空炉中以10℃/min的升温速率在425℃下退火30 min。对退火后的样品进行热循环,温度范围为25~325℃,加热和冷却速度为10℃/min,每个循环的峰底温度停留时间为2min。研究了铜在热循环过程中的突出和微观组织演变。结果表明:随着热循环次数的增加,突出值逐渐增大,循环次数增加到30次后达到2.152μm的稳定值;随着热循环次数的增加,铜的平均晶粒尺寸变大,表明在热循环过程中发生了晶粒长大。热循环试验后,铜晶粒尺寸越大,试样的突出度越大。
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