Yanming Xia, Kuili Ren, Shengli Ma, Y. Guan, Han Cai, Rongfeng Luo, Jun Yan, J. Chen, Yufeng Jin
{"title":"Design and characterization of petaloid hollow Cu interconnection for interposer","authors":"Yanming Xia, Kuili Ren, Shengli Ma, Y. Guan, Han Cai, Rongfeng Luo, Jun Yan, J. Chen, Yufeng Jin","doi":"10.1109/ICEPT.2016.7583303","DOIUrl":null,"url":null,"abstract":"In this paper, a novel petaloid hollow Cu interconnection for interposer is presented, its stress can be released by free ends face to hollow Cu interconnection center, and its fabrication process for Si substrate and glass substrate are also presented. Stress distribution and Max. stress of interposer with petaloid hollow Cu interconnection comparison with normal TSV is simulated and analyzed by thermal-mechanical model. Typical electrical path composed of petaloid hollow Cu interconnection is modeled, coupling influences of structure changing and thermal vibration on its electrical property is analyzed.","PeriodicalId":6881,"journal":{"name":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","volume":"52 1","pages":"1033-1036"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2016.7583303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, a novel petaloid hollow Cu interconnection for interposer is presented, its stress can be released by free ends face to hollow Cu interconnection center, and its fabrication process for Si substrate and glass substrate are also presented. Stress distribution and Max. stress of interposer with petaloid hollow Cu interconnection comparison with normal TSV is simulated and analyzed by thermal-mechanical model. Typical electrical path composed of petaloid hollow Cu interconnection is modeled, coupling influences of structure changing and thermal vibration on its electrical property is analyzed.
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