{"title":"0.18um 3.1–10.6GHz CMOS UWB LNA with 25 ±1dB gain","authors":"S. Shamsadini, F. Kashani, Neda Bathaei","doi":"10.1063/1.3586977","DOIUrl":null,"url":null,"abstract":"A 3.1–10.6GHz ultra-wideband low noise-amplifier (UWB LNA) using standard 0.18um CMOS technology has been reported. A two-stage, common-gate in cascade with cascode, UWB LNA has been proposed to achieve more than 10dB input and output return loss, high gain of 26dB, and NF of 2.9dB over the full frequency band. The proposed LNA consumes 10mW from 1.8V supply. The designed LNA has an excellent high gain in comparison with previous works.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":"33 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3586977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A 3.1–10.6GHz ultra-wideband low noise-amplifier (UWB LNA) using standard 0.18um CMOS technology has been reported. A two-stage, common-gate in cascade with cascode, UWB LNA has been proposed to achieve more than 10dB input and output return loss, high gain of 26dB, and NF of 2.9dB over the full frequency band. The proposed LNA consumes 10mW from 1.8V supply. The designed LNA has an excellent high gain in comparison with previous works.
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