Ying Ruan, Lei Chen, Liang Tian, Yan-hua Liu, Zong-sheng Lai
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引用次数: 0
Abstract
A 2.4GHz power amplifier (PA) for Wireless-LAN application is designed and implemented in 0.18µm SiGe BiCMOS technology. Without any off-chip component or band wire for matching, the proposed power amplifier is fully integrated, which has a two-stage structure with temperature-insensitive biasing circuit to improve the linearity with almost no increase in die area. S parameter simulation results show that input impedance matching S11 and output impedance matching S22 is less than -13dB and -20dB respectively. The power amplifier has a power gain of 27.3dB, output 1dB compression point of 23.2dBm, and a power added efficiency(PAE) of 21.3%.The area of the die is 1148×1140µm2 with all elements integrated on a single chip.
期刊介绍：
Presenting comprehensive coverage of this fast moving field, Wireless Communications and Mobile Computing provides the R&D communities working in academia and the telecommunications and networking industries with a forum for sharing research and ideas.
The convergence of wireless communications and mobile computing is bringing together two areas of immense growth and innovation. This is reflected throughout the journal by strongly focusing on new trends, developments, emerging technologies and new industrial standards.
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