Luminescence properties of ZnS-ZnO nanocomposites synthesized by solvothermal method

G. J. Christobel, C. Mahadevan
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Abstract

In the past decade, II-VI semiconductor nanoparticles attract much attention because of their size-dependent (and thus tunable) photo- and electro- luminescence properties and promising applications in optoelectronics. In this work we report on the synthesis of ZnS-ZnO semiconductor nanocomposites by noval and simple solvothermal method. The prepared nancomposites of different ratios were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-VIS absorption, Photoluminescence (PL) spectra and Photoconductivity (PC). X-ray diffraction (XRD) study confirmed the formation of multiphase of ZnS- ZnO nanocrystals . The calculated grain sizes using the Scherrer formula were found to be less than 4.5nm match with the SEM results. The UV-VIS absorption spectra show that the absorption edges of all nanocrystals fall within 310 to 350nm which explains a blue shift in wavelength corresponding to bulk.. Photoluminescence spectra of the nanocomposites exhibit five prominent peaks in the PL spectra. The peaks are observed at around 408, 446, 486, 490 and 530nm.
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溶剂热法制备ZnS-ZnO纳米复合材料的发光性能
在过去的十年中,II-VI半导体纳米颗粒因其尺寸依赖(因此可调谐)的光和电发光特性以及在光电子学中的应用前景而受到广泛关注。本文报道了用新颖、简单的溶剂热法合成ZnS-ZnO半导体纳米复合材料。采用x射线衍射(XRD)、扫描电镜(SEM)、紫外可见吸收光谱(UV-VIS)、光致发光光谱(PL)和光电导率(PC)对不同配比的纳米复合材料进行了表征。x射线衍射(XRD)研究证实了多相ZnS- ZnO纳米晶体的形成。利用Scherrer公式计算得到的晶粒尺寸与SEM结果吻合小于4.5nm。紫外可见吸收光谱表明,所有纳米晶体的吸收边缘都落在310 ~ 350nm范围内,这解释了与体块相对应的波长蓝移。纳米复合材料的光致发光光谱在PL光谱中表现出五个突出的峰。在408、446、486、490和530nm处观察到峰值。
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