Minority carrier lifetimes in 1.0-eV p-In0.27Ga0.73As layers grown on GaAs substrates

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI:10.1109/PVSC.2014.6925664

R. Tatavarti, K. Ban, A. Wibowo, D. Kuciauskas, H. Guthrey, K. Jones, S. Johnston, A. Norman, D. Levi, M. Al‐Jassim

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Abstract

Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In_0.27Ga_0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In_0.27Ga_0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-In_xGa_1-xAs with a doping density of 1×10¹⁷ cm^-3 to 5 ns for a doping density of 5×10¹⁷ cm^q̑3. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×10⁵ cm^-2 for a 1.0-μm thick layer of p-In_0.27Ga_0.73As (1.0eV) at the center of the wafer and 1.4×10⁶ cm^-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.

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在GaAs衬底上生长的1.0 ev p-In0.27Ga0.73As层的少数载流子寿命

时间分辨光致发光(TRPL)测量表明，在6英寸GaAs晶圆上生长的1.0 ev p-In0.27Ga0.73As的2 μm厚层中，电子的少数载流子寿命为15 ns。当1.0 ev p-In0.27Ga0.73As厚度从0.5 μm增加到2 μm时，电子寿命从10 ns增加到15 ns。当掺杂密度为1×1017 cm-3时，p-InxGa1-xAs的电子寿命从15 ns降至5×1017 cmq -3时的5 ns。阴极发光成像测量表明，在晶圆中心和边缘的1.0 μm厚p-In0.27Ga0.73As (1.0 ev)层位错密度分别为7.9×105 cm-2和1.4×106 cm-2。通过透射电镜研究了位错在变质梯度AllnGaAs层中的阻滞和穿线位错传播。

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2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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