L. Broussous, M. Lépinay, B. Coasne, C. Licitra, F. Bertin, V. Rouessac, A. Ayral
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引用次数: 0
Abstract
This study aims to investigate the modified surface porosity of SiOCH low-k porous thin films using statistical mechanics molecular simulations and ellipso-porosimetry. The thin films are modified by plasma etching and wet cleaning. Numerical simulations of solvent adsorption on surfaces highlighted solvent affinity variations depending on chemical surface compositions.
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