Kevin L. Lin, S. Bojarski, C. Carver, M. Chandhok, J. Chawla, J. Clarke, M. Harmes, B. Krist, H. Lang, M. Mayeh, S. Naskar, J. Plombon, S. Sung, H. Yoo
{"title":"Nickel silicide for interconnects","authors":"Kevin L. Lin, S. Bojarski, C. Carver, M. Chandhok, J. Chawla, J. Clarke, M. Harmes, B. Krist, H. Lang, M. Mayeh, S. Naskar, J. Plombon, S. Sung, H. Yoo","doi":"10.1109/IITC-MAM.2015.7325612","DOIUrl":null,"url":null,"abstract":"Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene process. Precise control of final metal composition ratio is important for obtaining low resistivity, as shown in thin-film and patterned structure measurements.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"12 1","pages":"169-172"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene process. Precise control of final metal composition ratio is important for obtaining low resistivity, as shown in thin-film and patterned structure measurements.
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