Modeling of quantum capacitance of Graphene Nanoribbons

Z. Johari, N. Aziziah Amin, M. Ahmadi, D. Chek, S. Mahdi Mousavi, R. Ismail
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引用次数: 9

Abstract

Graphene is a single atomic layer of carbon atoms arranged into a two-dimensional (2D) hexagonal lattice [1,2,3] much like a honeycomb. Graphene Nanoribbons, (GNRs) on the other hand is a single-layer of graphite. It managed to capture wide attention of researchers that it is a new exciting material with remarkable transport properties [3,4,5] such as high mobility [1,3,5] for ballistic transport [1,2], ignoring barriers created by imperfections and they show quantum effects [2] at room temperature. Graphene is considered to be an alternative to Si for the channel of field-effect transistor (FETs) [3]. Eventhough Carbon Nanotube (CNT) possess better electrical properties such as higher carrier mobility compared to Graphene Nanoribbons, GNRs we chose to use GNRs instead of CNT due to the reason that the chirality of CNT is very difficult to control during the fabrication in which the chirality of GNRs is easier to manage [6].
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石墨烯纳米带的量子电容建模
石墨烯是由碳原子组成的单原子层,排列成二维(2D)六边形晶格[1,2,3],很像蜂窝。另一方面,石墨烯纳米带(gnr)是单层石墨。它是一种令人兴奋的新材料,具有显著的输运特性[3,4,5],如弹道输运的高迁移率[1,3,5][1,2],忽略了缺陷产生的障碍,并在室温下表现出量子效应[2],引起了研究人员的广泛关注。石墨烯被认为是场效应晶体管(fet)通道中硅的替代品[3]。尽管与石墨烯纳米带相比,碳纳米管(CNT)具有更好的电性能,如更高的载流子迁移率,但我们选择使用gnr而不是CNT的原因是,在制造过程中,CNT的手性很难控制,而gnr的手性更容易管理[6]。
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