High/low pulse generation of deadbeat based high power DC-DC converter with very short rise time

Seiya Mizushima, Hiromi Adachi, A. Kawamura, I. Yuzurihara, Ryosuke Ohma
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引用次数: 3

Abstract

Radio frequency (RF) generators are used in semiconductor product manufacture. They supply high power pulse to a plasma chamber. Recently, many semiconductor products are used in electronic devices, which are getting smaller and smaller. In proportion to this, the machines which manufacture semiconductor products require higher frequency High/Low (HL) pulse power to the RF generators. A higher frequency HL pulse can be obtained by decreasing an output capacitance. However, this leads to a decrease of the output voltage stability. To solve this conflict, iLref deadbeat control method is proposed to improve them. The stability of the proposed control method was verified and improved through the evaluation, which used the equivalent transfer function of the control system. The experimental results prove that the experimental circuit was able to generate the stable 120 V/12 V HL-pulse output without voltage overshoot when the input voltage was 240V. The results also show the rise time (0 % to 99 %) was about 510 μs, that is the slew rate at rising of the output voltage was about 210 kV/sec.
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无差拍大功率DC-DC变换器的高/低脉冲产生,上升时间极短
射频(RF)发生器用于半导体产品制造。它们为等离子体室提供高功率脉冲。最近,许多半导体产品被用于电子设备,电子设备变得越来越小。与此成比例的是,制造半导体产品的机器需要更高频率的高/低(HL)脉冲功率给射频发生器。通过减小输出电容可以获得更高频率的HL脉冲。然而,这会导致输出电压稳定性的降低。为了解决这一矛盾,提出了一种iLref无差拍控制方法。通过利用控制系统的等效传递函数进行评价,验证了所提控制方法的稳定性,并对其进行了改进。实验结果证明,当输入电压为240V时,实验电路能够产生稳定的120v / 12v hl脉冲输出,无电压超调。结果还表明,从0%到99%的上升时间约为510 μs,即输出电压上升时的压转率约为210 kV/sec。
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