Performance Analysis and Scaling Behavior of Ultra-Scaled III-V (InAs) HEMTs System with 2-D Tunneling Effects on Leakage Current

Abstract

In this paper, the performance of Indium Arsenide (InAs) High Electron Mobility Transistor (HEMT) of 20nm gate length (Lg) is investigated by reducing the insulating density to enhance gate control whereas increasing the gate's efficiency in suppressing gate leakage. The scaling behavior of ultra-scaled InAs HEMTs system is investigated employing a 2-dimensional (2D) real-space effective mass ballistic quantum transport simulator, MATLAB and OMEN_FET on the nanohub website. Moreover, C++, OMEN programming language and Graphical User Interface (GUI) back scripts modifications tool are used. OMEN_HFET employs a real-space effective mass 2-D Schrödinger-Poisson convergent thinker to investigate the transport properties of nanoscale transistors. The process of the simulation region is limited to the contact area of the gate and the source or the drain contact is shapely by two series resistance. The device simulator can be used to gain a deeper insight into electron transport and to design the device for best performance once scaled to the nanometer systems. The simulation shows the comparison between the simulated Id-Vgs and Ig-Vgs characteristics of 20nm to 50nm gate length of flat and curves gate contact shape for InAs HEMTs. Furthermore, characteristics of Id-Vgs, horizontal electron density, and electrostatic potential, electron density; conduction band minimum; conduction band minimum in the quantum domain; current density, etc are observed by the simulation tools with better performance of the InAs HEMT of 20nm gate length which fulfilled the aim of the work.