Minimizing Write Amplification to Enhance Lifetime of Large-page Flash-Memory Storage Devices

Wei-Lin Wang, Tseng-Yi Chen, Yuan-Hao Chang, H. Wei, W. Shih
{"title":"Minimizing Write Amplification to Enhance Lifetime of Large-page Flash-Memory Storage Devices","authors":"Wei-Lin Wang, Tseng-Yi Chen, Yuan-Hao Chang, H. Wei, W. Shih","doi":"10.1145/3195970.3196076","DOIUrl":null,"url":null,"abstract":"Due to the decreasing endurance of flash chips, the lifetime of flash drives has become a critical issue. To resolve this issue, various techniques such as wear-leveling and error correction code have been proposed to reduce the bit error rates of flash storage devices. In contrast to these techniques, we observe that minimizing write amplification is another promising direction to enhance the lifetime of a flash storage device. However, the development trend of large-page flash memory exacerbates the write amplification issue. In this work, we present a compression-based management design to deal with compressed data updates and internal fragmentation in flash pages. Thus, it can minimize write amplification by only updating the modified part of flash pages with the support of data reduction techniques; and the reduced write amplification degree is more significant when the flash page size becomes larger due to the development trend. This design is orthogonal to wear-leveling and error correction techniques and thus can cooperate with them to further enhance the lifetime of a flash device. Based on a series of experiments, the results demonstrate that the proposed design can effectively improve the lifetime of a flash storage device by reducing write amplification.","PeriodicalId":6491,"journal":{"name":"2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)","volume":"1 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/3195970.3196076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Due to the decreasing endurance of flash chips, the lifetime of flash drives has become a critical issue. To resolve this issue, various techniques such as wear-leveling and error correction code have been proposed to reduce the bit error rates of flash storage devices. In contrast to these techniques, we observe that minimizing write amplification is another promising direction to enhance the lifetime of a flash storage device. However, the development trend of large-page flash memory exacerbates the write amplification issue. In this work, we present a compression-based management design to deal with compressed data updates and internal fragmentation in flash pages. Thus, it can minimize write amplification by only updating the modified part of flash pages with the support of data reduction techniques; and the reduced write amplification degree is more significant when the flash page size becomes larger due to the development trend. This design is orthogonal to wear-leveling and error correction techniques and thus can cooperate with them to further enhance the lifetime of a flash device. Based on a series of experiments, the results demonstrate that the proposed design can effectively improve the lifetime of a flash storage device by reducing write amplification.
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最小化写放大以提高大页闪存存储设备的使用寿命
由于闪存芯片的耐用性不断降低,闪存驱动器的寿命已成为一个关键问题。为了解决这个问题,人们提出了各种技术,如损耗均衡和纠错码,以降低闪存存储设备的误码率。与这些技术相比,我们观察到最小化写放大是提高闪存设备寿命的另一个有希望的方向。然而,大页闪存的发展趋势加剧了写入放大问题。在这项工作中,我们提出了一种基于压缩的管理设计来处理压缩数据更新和flash页面中的内部碎片。因此,在数据缩减技术的支持下,只需更新flash页面的修改部分,即可最大限度地减少写入放大;随着flash页面尺寸的不断增大,写入放大程度的降低也越来越明显。该设计与损耗平衡和纠错技术是正交的,因此可以与它们合作,进一步提高闪存器件的使用寿命。一系列实验结果表明,该设计可以有效地降低写入放大,从而提高闪存器件的使用寿命。
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