An improved mathematical modeling to simulate metallization screen pattern trend for silicon solar cell

Lin Jiang, Weiming Zhang, Tracy Guo, David Kapp, Li Yan, Larry Wang
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引用次数: 15

Abstract

The series resistance calculation based on H-type model has been widely used to understand power loss mechanism in semiconductor solar cell, and one of its popular applications is to predict optimal metallization screen printing pattern. The disadvantage of this model is that it is not accurate to estimate the relationship of screen pattern trend vs. cell efficiency, since it is based on an ideal rectangular finger shape, which does not exist in present regular screen printing process. In this work, a revised model is proposed to simulate the contact resistant power loss in multi-crystalline silicon solar cell. Improved accuracy of the new model is found by comparing the simulation results to the I-V testing data of multi-crystalline silicon solar cell printed with Heraeus 96XX front Ag paste.
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一种改进的模拟硅太阳能电池金属化屏图案趋势的数学模型
基于h型模型的串联电阻计算已被广泛应用于了解半导体太阳能电池的功率损耗机理,其热门应用之一是预测最佳金属化丝网印刷图案。该模型的缺点是,由于它是基于理想的矩形手指形状,在目前的常规丝网印刷工艺中不存在,因此它不能准确地估计丝网图案趋势与电池效率的关系。本文提出了一个修正模型来模拟多晶硅太阳能电池的接触电阻功率损耗。将仿真结果与贺利氏96XX银浆印刷的多晶硅太阳能电池的I-V测试数据进行比较,发现新模型的精度有所提高。
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