{"title":"Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices","authors":"A. Toprak, E. Özbay","doi":"10.2139/ssrn.4359533","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":18617,"journal":{"name":"Microelectron. J.","volume":"3 1","pages":"105762"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectron. J.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2139/ssrn.4359533","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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