A Facile Strategy for Controllable Synthesis of High-Quality Two-Dimensional Tellurium by Chemical Vapor Transport

Xinxin Zhao, Jia Shi, Q. Yin, Zhuo Dong, Yan Zhang, Lixing Kang, Qiang Yu, Cheng Chen, Jie Li, Xin-Fu Liu, Kai Zhang
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Abstract

Recently, as an elementary material, tellurium (Te) has received widespread attention for its high carrier mobility, intriguing topological properties and excellent environmental stability. However, it is difficult to obtain two-dimensional (2D) Te with high crystalline quality due to its intrinsic helical chain structure. Herein, a facile strategy for controllable synthesis of high quality 2D Te nanoflakes through chemical vapor transport (CVT) in one step is reported. With carefully tuning the growth kinetics determined mainly by temperature, tellurium nanoflakes in lateral size of up to ~40 μm with high crystallinity can be achieved. We also investigated the second harmonic generation (SHG) of Te nanoflakes, which demonstrates that it can be used as frequency doubling crystals and has potential applications in nonlinear optical devices. In addition, field effect transistor (FET) devices based on the as-grown 2D Te nanoflakes were fabricated and exhibited excellent electrical properties with high mobility of 379 cm2 V-1s-1.
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化学气相输运制备高质量二维碲的简易可控策略
近年来,碲作为一种基本材料,因其高载流子迁移率、有趣的拓扑性质和优异的环境稳定性而受到广泛关注。然而,由于其固有的螺旋链结构,很难获得高结晶质量的二维(2D) Te。本文报道了一种通过化学气相传递(CVT)一步可控合成高质量二维Te纳米片的方法。通过对主要由温度决定的生长动力学进行精心调整,可以获得横向尺寸可达~40 μm且结晶度高的碲纳米片。我们还研究了Te纳米片的二次谐波产生(SHG),这表明它可以用作倍频晶体,并在非线性光学器件中具有潜在的应用前景。此外,还制备了基于生长的二维Te纳米片的场效应晶体管(FET)器件,并表现出优异的电学性能,迁移率高达379 cm2 V-1s-1。
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