{"title":"Ba(X1/3Ta2/3)O3 complex perovskites for microwave and millimeter-wave applications","authors":"L. Nedelcu, C. Busuioc, M. Banciu, R. Ramer","doi":"10.1109/SMICND.2012.6400778","DOIUrl":null,"url":null,"abstract":"Ba(X<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> (X=Zn, Mg) perovskites were prepared by using the solid state reaction method. X-ray diffraction and scanning electron microscopy were employed for structural and morphological characterization of Ba(X<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> samples. The dielectric constant of the resonators was 28 for Ba(Zn<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> and 24 for Ba(Mg<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub>. A strong influence of the cation ordering on the dielectric loss has been found. The achieved values of Q × f product, ranging from 100 to 200 THz, make Ba(X<sub>1/3</sub>Ta<sub>2/3</sub>)O<sub>3</sub> dielectric resonators attractive for microwave and millimetre-wave applications.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"96 1","pages":"303-306"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400778","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Ba(X1/3Ta2/3)O3 (X=Zn, Mg) perovskites were prepared by using the solid state reaction method. X-ray diffraction and scanning electron microscopy were employed for structural and morphological characterization of Ba(X1/3Ta2/3)O3 samples. The dielectric constant of the resonators was 28 for Ba(Zn1/3Ta2/3)O3 and 24 for Ba(Mg1/3Ta2/3)O3. A strong influence of the cation ordering on the dielectric loss has been found. The achieved values of Q × f product, ranging from 100 to 200 THz, make Ba(X1/3Ta2/3)O3 dielectric resonators attractive for microwave and millimetre-wave applications.
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