A Fast Switching Superjunction IGBT with Segmented Anode NPN

Abstract

In this paper, a fast switching segmented anode npn superjunction (SJ) insulated gate bipolar transistor (SA-NPN SJ IGBT) is proposed. The anode of the device consists of segments of n-col/p and p-col under the n-buffer. The n-col/p-base/n-buffer forms a narrow base npn transistor, which helps electrons to be extracted faster and reduces the turn-off loss $(E_{\text{off}})$. It is demonstrated that the npn transistor could reduce the $E_{\text{off}}$ dramatically at any pillar doping levels. In addition, the effect of different ratio of the anode segments and doping concentration of p-base has also been investigated. Simulation results show that, under on-state voltage drop $(V_{\text{on}})$ of 0.98 V, $E_{\text{off}}$ of the SA-NPN SJ IGBT is as low as 0.74 m.J/cm2, which is 45% lower than that of the conventional SJ IGBT.