{"title":"Performance of InGaN/GaN Laser Diode Based on Quaternary Alloys Stopper and Superlattice Layers","authors":"S. Thahab, H. A. Hassan, Z. Hassan","doi":"10.5281/zenodo.1062654","DOIUrl":null,"url":null,"abstract":"The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.","PeriodicalId":23701,"journal":{"name":"World Academy of Science, Engineering and Technology, International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering","volume":"38 1","pages":"322-326"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"World Academy of Science, Engineering and Technology, International Journal of Chemical, Molecular, Nuclear, Materials and Metallurgical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5281/zenodo.1062654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.
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