Microcrack Formation in Silicon Solar Cells during Cold Temperatures

H. Seigneur, E. Schneller, Jason Lincoln, Hossein Ebrahimi, Hossein Ebrahimi, A. Gabor, M. Rowell, Victor Victor Huayamave
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引用次数: 5

Abstract

A single brief exposure of a photovoltaic (PV) module or coupon to cold temperatures down to -40°C, the lower limit in IEC photovoltaic testing standards, significantly degrades the fracture strength of silicon solar cells. To understand the mechanism behind the fracture strength degradation, we built a finite element model of a single cell encapsulated coupon and reduced the temperature isothermally from 25°C to -40°C and from 150°C to -40°C. Our modeling results confirm that the regions next to the interconnect wires see high stresses. The silicon wafer bends around the top wire towards the glass; whereas, the entire coupon curves in the opposite direction. The first-principle stress in the entire silicon wafer was found to be compressive, mostly in plane in the direction perpendicular to the wires, yet unable to cause a failure due to the much larger compressive strength of silicon. On the other hand, out-of-plane shear stresses on each side of the ribbons were observed to exceed considerably the shear strength of silicon, most likely causing the formation of microcracks. These microcracks that form during cooling can later propagate into full cracks at relatively low front side loads that place the cells into tensile stress. We also investigated whether the silicon cell may be buckling due to high compressive stresses due to the backsheet and encapsulant shrinkage. Index Terms— Cooling, Failure analysis, Numerical models, Photovoltaic cells, Solar Panels, Surface cracks, Thermal analysis, Thermal expansion, Thermal stresses.
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低温下硅太阳能电池微裂纹的形成
将光伏(PV)组件或组件短暂暴露在低至-40°C (IEC光伏测试标准的下限)的低温下,会显著降低硅太阳能电池的断裂强度。为了了解断裂强度下降背后的机制,我们建立了单个细胞封装接头的有限元模型,并将温度从25°C等温降低到-40°C,从150°C等温降低到-40°C。我们的建模结果证实,靠近互连线的区域看到高应力。硅晶片绕着顶端的金属丝向玻璃弯曲;而整个券息曲线的方向相反。发现整个硅片的第一原理应力是压应力,主要在垂直于导线方向的平面上,但由于硅的抗压强度大得多,因此无法导致失效。另一方面,观察到条带两侧的面外剪切应力大大超过硅的剪切强度,很可能导致微裂纹的形成。这些在冷却过程中形成的微裂纹随后会在相对较低的前侧载荷下扩展成完整的裂纹,从而使电池处于拉伸应力状态。我们还研究了硅电池是否可能由于背板和封装剂收缩引起的高压应力而屈曲。索引术语-冷却,失效分析,数值模型,光伏电池,太阳能电池板,表面裂纹,热分析,热膨胀,热应力。
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