Electrical Characterization of Chemically Grown CdS and CdTe Thin Films for Solar Cell Application

Mani Tsoho, A. B. Ahmed, A. Musa, Mansur Said
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Abstract

Thin films of Cadmium Sulphide (CdS) and Cadmium Telluride (CdTe) have gained a great deal of interest due to their potential applications in solar cells. Deposition of CdS and CdTe thin films were performed on Soda Lime glass and FTO substrate at 400℃ and 300℃ respectively using spray pyrolysis technique. The Hall Effect property was measured for the deposited CdS and CdTe films. These results shows the resistivity and mobility of CdS films deposited at 400℃ were 1.588×104 Ωcm and 5.619×102 cm2/Vs, respectively, The annealed CdTe thin film had a resistivity value of 1.016×104 Ωcm, while the annealed and etched CdTe thin film had a resistivity value of 4.52×104 Ωcm, The resultant films are observed to be good to make a solar cell with CdS as a window layer and CdTe as absorber layer.
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太阳能电池用化学生长CdS和CdTe薄膜的电学特性
硫化镉(cd)和碲化镉(CdTe)薄膜由于其在太阳能电池中的潜在应用而引起了人们的极大兴趣。采用喷雾热解技术,分别在400℃和300℃条件下,在碱石灰玻璃和FTO衬底上沉积CdS和CdTe薄膜。测量了沉积的CdS和CdTe薄膜的霍尔效应特性。结果表明,在400℃沉积的CdS薄膜的电阻率和迁移率分别为1.588×104 Ωcm和5.619×102 cm2/Vs,退火的CdTe薄膜的电阻率值为1.016×104 Ωcm,而退火和蚀刻的CdTe薄膜的电阻率值为4.52×104 Ωcm,所得到的薄膜可以很好地制成以CdS为窗口层,CdTe为吸收层的太阳能电池。
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