Comparison of DC and pulse train analysis on submicrometer pMOSFETs lifetime prediction using on-the-fly method

Abstract

Lifetime of pMOSFETs is limited by negative bias temperature instability (NBTI). NBTI causes the degradation of drive current and threshold voltage of p-MOSFETs. This paper presents the comparison of DC and pulse train analysis on sub micrometer pMOSFETs lifetime prediction using on-the-fly (OTF) method. The SiO2 conventional PMOS transistor having effective oxide thickness (EOT) between 1.8nm and 2.8nm were simulated by applying various simulation conditions. The lifetime prediction was studied by varying the stress voltage and size of EOT for pMOSFETs. Results of this simulation demonstrate the impact of EOT variability on operational voltage, Vgop and interface trap vs stress time for both DC and pulse train analysis.