G. Lucovsky, Cheng Wang, R.J. Nemanich, M.J. Williams
{"title":"Deposition of μc-Si and μc-SiC thin films by remote plasma-enhanced chemical-vapor deposition","authors":"G. Lucovsky, Cheng Wang, R.J. Nemanich, M.J. Williams","doi":"10.1016/0379-6787(91)90075-Z","DOIUrl":null,"url":null,"abstract":"<div><p>This paper describes properties of microcrystalline silicon (μc-Si), and microcrystalline silicon-carbon (μc-SiC) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of μc-Si and μc-SiC thin films; (ii) the characterization and properties of the intrinsic and doped μc-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped μc-SiC thin film materials; and (iv) the application of remote PECVD μc-Si and μc-SiC thin films in device structures.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 419-434"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90075-Z","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Cells","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/037967879190075Z","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This paper describes properties of microcrystalline silicon (μc-Si), and microcrystalline silicon-carbon (μc-SiC) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of μc-Si and μc-SiC thin films; (ii) the characterization and properties of the intrinsic and doped μc-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped μc-SiC thin film materials; and (iv) the application of remote PECVD μc-Si and μc-SiC thin films in device structures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
