Electrochemical properties of boron-doped diamond thin-film

功能材料与器件学报 Pub Date : 2005-01-01 DOI:10.1149/ma2014-01/27/1131

C. Darong

引用次数: 0

Abstract

By cyclic voltammetry, electrochemical properties of the boron-doped diamond thin-film electrode were investigated compared with those of Pt/BDD electrode. It shows that the boron-doped diamond thin-film electrode has wide electrochemical window (approximate 3V), excellent chemical stability and low background current (near zero ). At the same time, the result was analyzed with energy level theory. All the works show that the boron-doped diamond thin film is a kind of ideal potential electrode.

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掺硼金刚石薄膜的电化学性能

采用循环伏安法研究了掺硼金刚石薄膜电极与Pt/BDD电极的电化学性能。结果表明，掺硼金刚石薄膜电极具有宽的电化学窗口(约3V)、优异的化学稳定性和低的背景电流(接近于零)。同时，用能级理论对结果进行了分析。结果表明，掺硼金刚石薄膜是一种理想的电位电极。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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功能材料与器件学报

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期刊介绍： Journal of Functional Materials and Devices is an electronic information journal. It was founded in 1995 and is an academic journal that is publicly distributed at home and abroad. It is supervised by the Chinese Academy of Sciences and co-sponsored by the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences and the Chinese Society for Materials Research. It is published bimonthly and is publicly distributed at home and abroad. It mainly publishes papers that reflect innovative scientific research results and application technology progress in the field of functional materials and devices. The readers are scientific researchers, engineering and technical personnel, and teachers and students of colleges and universities who are engaged in the research, production and application of functional materials and devices.

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