Improve Interconnect Reliability of BGA Substrate with Stacked Vias by Reducing Carbon Inclusion in the Interface Between Via and Land Pad

K. Zeng, J. Williamson
{"title":"Improve Interconnect Reliability of BGA Substrate with Stacked Vias by Reducing Carbon Inclusion in the Interface Between Via and Land Pad","authors":"K. Zeng, J. Williamson","doi":"10.1109/ECTC.2018.00031","DOIUrl":null,"url":null,"abstract":"In this paper, an investigation was carried out on how to improve bonding of electroless copper (Cu) to electroplated Cu by optimizing the activation process. First, interfacial structure between via and land pad was analyzed to identify the normal and abnormal features. Carbon inclusion was determined as an anomaly of Pd seed layer. Second, an experiment was performed to characterize the impact of activation dipping time and rinse time on the formation of carbon inclusions. A procedure was developed to quantitatively evaluate carbon inclusions in the via interface. It was found that, as expected, combination of shorter dipping time and longer rinse time resulted in fewer carbon inclusions in the Pd seed layer. Finally, based on the mechanism of Cu-Cu bonding and data from the experimental study, the quantity of carbon inclusions and the coverage of carbon on the interface are proposed for monitoring the quality of via/pad interface.","PeriodicalId":6555,"journal":{"name":"2018 IEEE 68th Electronic Components and Technology Conference (ECTC)","volume":"1 1","pages":"150-156"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 68th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2018.00031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

In this paper, an investigation was carried out on how to improve bonding of electroless copper (Cu) to electroplated Cu by optimizing the activation process. First, interfacial structure between via and land pad was analyzed to identify the normal and abnormal features. Carbon inclusion was determined as an anomaly of Pd seed layer. Second, an experiment was performed to characterize the impact of activation dipping time and rinse time on the formation of carbon inclusions. A procedure was developed to quantitatively evaluate carbon inclusions in the via interface. It was found that, as expected, combination of shorter dipping time and longer rinse time resulted in fewer carbon inclusions in the Pd seed layer. Finally, based on the mechanism of Cu-Cu bonding and data from the experimental study, the quantity of carbon inclusions and the coverage of carbon on the interface are proposed for monitoring the quality of via/pad interface.
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通过减少积碳在积碳孔与衬垫之间的界面中,提高积碳孔BGA衬底互连的可靠性
本文研究了如何通过优化活化工艺来改善化学铜与电镀铜的结合。首先,分析了通孔与陆垫之间的界面结构,识别出正常与异常特征;碳包裹是钯籽层的异常。其次,通过实验表征了活化浸渍时间和漂洗时间对碳包裹体形成的影响。开发了一种定量评价通孔界面中碳包裹体的方法。结果表明,随着浸渍时间的缩短和漂洗时间的延长,钯籽层中的碳包裹体减少。最后,根据Cu-Cu键合机理和实验研究数据,提出了通过碳包体的数量和碳在界面上的覆盖率来监测通孔/焊盘界面的质量。
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