Simulation of a novel flip-chip antenna in THz region

2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2015-07-01 DOI:10.1109/IMWS-AMP.2015.7324912

Haidong Hao, Z. Tang, L. Xin

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引用次数: 2

Abstract

In this paper, issues a novel Flip-chip (FC) package model simulation of THz on a chip integrated antenna. Log periodic antenna is designed on a GaAs substrate, with a thickness of 100 μm. An air bridge of Schottky Diode located at the center of the antenna is protected by using thin-film ceramic layer for supporting layer. About 200 μm diameter Au pad on GaAs substrate is connected to the PCB board via thin-film ceramic layer. There is an air chamber underneath the antenna to improve antenna performance and mitigate multilayer structure influence the near filed of antenna. The FC package mode cause simulation results performance to deteriorate. Nevertheless, good performance has been obtained up to around 0.25-0.34 THz (λ=1200μm-880μm). Thus, FC processing with thin-film ceramic layer has been proven to be one solution for THz region antenna package. Which can give simplicity and possibility of designing large format arrays on a direct detection or heterodyne detection THz system.

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一种新型倒装天线在太赫兹区的仿真

本文提出了一种新的倒装芯片(FC)封装模型，在芯片集成天线上对太赫兹进行仿真。对数周期天线设计在GaAs衬底上，厚度为100 μm。采用薄膜陶瓷层作为支撑层保护位于天线中心的肖特基二极管气桥。GaAs衬底上直径约200 μm的Au衬底通过薄膜陶瓷层与PCB板连接。天线下方设有气室，以提高天线性能，减轻多层结构对天线近场的影响。FC包模式会影响仿真结果的性能。尽管如此，在0.25-0.34 THz (λ=1200μm-880μm)范围内获得了良好的性能。因此，采用薄膜陶瓷层的光纤加工已被证明是太赫兹区域天线封装的一种解决方案。这使得在直接探测或外差探测太赫兹系统上设计大格式阵列变得简单和可行。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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