J. Bogan, A. McCoy, C. Byrne, R. O'Connor, G. Hughes
{"title":"Atomic oxygen treatment of carbon containing low-k dielectric materials to facilitate manganese silicate barrier formation","authors":"J. Bogan, A. McCoy, C. Byrne, R. O'Connor, G. Hughes","doi":"10.1109/IITC-MAM.2015.7325628","DOIUrl":null,"url":null,"abstract":"The surface treatment of low-k dielectric layers by exposure to atomic oxygen is presented as an alternative to plasma based treatments prior to barrier layer formation. High carbon content porous low-k dielectric films were subjected to increasing exposures of atomic oxygen and X-ray photoelectron spectroscopy (XPS) studies reveal both the depletion of carbon and the addition of oxygen at the surface. This treatment is shown to be thermally stable up to 400 °C. High resolution electron energy loss spectroscopy (EELS) elemental profiles show the removal of carbon from the surface of the treated films to a depth of ~ 20 nm. In a separate experiment manganese (~1-2 nm) was deposited on an oxygen treated substrate and thermally annealed to form MnSiO3. It is shown that the modification of the low-k surface made the chemical identification of MnSiO3 formation possible by XPS analysis.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"29 1","pages":"67-70"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325628","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The surface treatment of low-k dielectric layers by exposure to atomic oxygen is presented as an alternative to plasma based treatments prior to barrier layer formation. High carbon content porous low-k dielectric films were subjected to increasing exposures of atomic oxygen and X-ray photoelectron spectroscopy (XPS) studies reveal both the depletion of carbon and the addition of oxygen at the surface. This treatment is shown to be thermally stable up to 400 °C. High resolution electron energy loss spectroscopy (EELS) elemental profiles show the removal of carbon from the surface of the treated films to a depth of ~ 20 nm. In a separate experiment manganese (~1-2 nm) was deposited on an oxygen treated substrate and thermally annealed to form MnSiO3. It is shown that the modification of the low-k surface made the chemical identification of MnSiO3 formation possible by XPS analysis.