Atomic oxygen treatment of carbon containing low-k dielectric materials to facilitate manganese silicate barrier formation

J. Bogan, A. McCoy, C. Byrne, R. O'Connor, G. Hughes
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Abstract

The surface treatment of low-k dielectric layers by exposure to atomic oxygen is presented as an alternative to plasma based treatments prior to barrier layer formation. High carbon content porous low-k dielectric films were subjected to increasing exposures of atomic oxygen and X-ray photoelectron spectroscopy (XPS) studies reveal both the depletion of carbon and the addition of oxygen at the surface. This treatment is shown to be thermally stable up to 400 °C. High resolution electron energy loss spectroscopy (EELS) elemental profiles show the removal of carbon from the surface of the treated films to a depth of ~ 20 nm. In a separate experiment manganese (~1-2 nm) was deposited on an oxygen treated substrate and thermally annealed to form MnSiO3. It is shown that the modification of the low-k surface made the chemical identification of MnSiO3 formation possible by XPS analysis.
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原子氧处理含碳低k介电材料,有利于锰硅酸盐阻挡层的形成
通过暴露于原子氧的低k介电层的表面处理被提出作为在阻挡层形成之前基于等离子体的处理的替代方法。高碳含量的多孔低k介电膜受到原子氧的不断增加的暴露,x射线光电子能谱(XPS)研究揭示了表面碳的消耗和氧的增加。这种处理在高达400°C时表现出热稳定性。高分辨率电子能量损失谱(EELS)元素谱显示,碳从处理过的薄膜表面去除至~ 20nm深度。在另一项实验中,将锰(~1-2 nm)沉积在氧处理的衬底上并进行热退火以形成MnSiO3。结果表明,低k表面的修饰使得XPS分析可以对MnSiO3的形成进行化学鉴定。
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