{"title":"A reliability study of a new embedded flash to reduce charge-loss issue","authors":"Lingling Shao, Y. Zhao, Wei Han, W. Chien","doi":"10.1109/CSTIC.2017.7919738","DOIUrl":null,"url":null,"abstract":"We investigated the mechanism of read stress and standby with power-on after more than 20 program/erase cycles, which cause conventional embedded flash memory read “0” fail. To solve this, a new e-flash with reversed drain-source cell device was introduced. In this paper, we studied the reliability performance of conventional and the new e-flash. Experimental results proved that the newly designed e-flash exhibits superior performance in terms of data retention, endurance, and the potential at multilevel operations.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"23 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We investigated the mechanism of read stress and standby with power-on after more than 20 program/erase cycles, which cause conventional embedded flash memory read “0” fail. To solve this, a new e-flash with reversed drain-source cell device was introduced. In this paper, we studied the reliability performance of conventional and the new e-flash. Experimental results proved that the newly designed e-flash exhibits superior performance in terms of data retention, endurance, and the potential at multilevel operations.
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