Silicon models of lateral inhibition

S. Wolpert, E. Micheli-Tzanakou
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引用次数: 10

Abstract

Lateral inhibition is characterized in two CMOS VLSI-based sensory arrays with different pixel geometries and inhibitory algorithms. In these arrays, each sensory pixel inhibits, and in turn, is inhibited by each of its immediate neighbors. Test results indicate that both circuits are able to enhance the contrast of arbitrary two-dimensional images, and do so in a manner that is dynamically stable. Achieving this enhancement on sensory images immediately and simultaneously, this operation offers performance at a level not obtainable by software methods. As such, it is well suited for machine vision systems that utilize parallel architectures.<>
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横向抑制的硅模型
横向抑制在两种基于CMOS vlsi的传感器阵列中具有不同的像素几何形状和抑制算法。在这些阵列中,每个感觉像素抑制它的相邻像素,然后又被相邻像素抑制。测试结果表明,这两种电路都能够增强任意二维图像的对比度,并且以动态稳定的方式这样做。在感官图像上立即和同时实现这种增强,该操作提供了软件方法无法达到的性能水平。因此,它非常适合使用并行架构的机器视觉系统
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