Оптические свойства халькогенидных стекол системы Ga-Ge-Sb-Se, легированных ионами тербия и диспрозия, вблизи края полосы фундаментального поглощения

Ю. С. Кузюткина, Н. Д. Паршина, Е. А. Романова, В. И. Кочубей, М. В. Суханов, Л А Кеткова, В. С. Ширяев
{"title":"Оптические свойства халькогенидных стекол системы Ga-Ge-Sb-Se, легированных ионами тербия и диспрозия, вблизи края полосы фундаментального поглощения","authors":"Ю. С. Кузюткина, Н. Д. Паршина, Е. А. Романова, В. И. Кочубей, М. В. Суханов, Л А Кеткова, В. С. Ширяев","doi":"10.21883/os.2023.01.54532.4083-22","DOIUrl":null,"url":null,"abstract":"In the paper, results of measurements of the optical response of chalcogenide glasses of the Ga5Ge20Sb10Se65 composition doped with rare-earth ions Tb3+ or Dy3+, in the wavelength range of 0.7 – 1.5 μm by the method of IR spectroscopy are presented. Parameters characterizing the fundamental absorption band edge of the glasses - optical bandgap energy, Urbach tail parameter and weak absorption tail parameter - have been evaluated. It has been found that doping in low concentrations (up to 0.3 mass%) does not influence the optical bandgap energy and optical properties of the glasses in the range of the Urbach tail, but in the range of the weak absorption tail, optical response of the glasses depends on the activator concentration. Crystallization of the glasses produced by the direct melting method also depends on the activator concentration. In the glasses doped with Dy3+, absorption bands of the ion are located in the range of the weak absorption tail of the glass that makes possible energy transfer between the ions and the gap states of the charge carriers.","PeriodicalId":24059,"journal":{"name":"Оптика и спектроскопия","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Оптика и спектроскопия","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/os.2023.01.54532.4083-22","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

In the paper, results of measurements of the optical response of chalcogenide glasses of the Ga5Ge20Sb10Se65 composition doped with rare-earth ions Tb3+ or Dy3+, in the wavelength range of 0.7 – 1.5 μm by the method of IR spectroscopy are presented. Parameters characterizing the fundamental absorption band edge of the glasses - optical bandgap energy, Urbach tail parameter and weak absorption tail parameter - have been evaluated. It has been found that doping in low concentrations (up to 0.3 mass%) does not influence the optical bandgap energy and optical properties of the glasses in the range of the Urbach tail, but in the range of the weak absorption tail, optical response of the glasses depends on the activator concentration. Crystallization of the glasses produced by the direct melting method also depends on the activator concentration. In the glasses doped with Dy3+, absorption bands of the ion are located in the range of the weak absorption tail of the glass that makes possible energy transfer between the ions and the gap states of the charge carriers.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
在基本吸收带边缘附近的Ga-Ge-Sb-Se光学特性
本文用红外光谱法测量了掺入稀土离子Tb3+或Dy3+的Ga5Ge20Sb10Se65组成的硫系玻璃在0.7 ~ 1.5 μm波长范围内的光学响应。对表征玻璃基吸收带边缘的光学带隙能量、乌尔巴赫尾参数和弱吸收尾参数进行了评价。研究发现,在乌尔巴赫尾范围内,低浓度(质量%为0.3)掺杂对玻璃的光学带隙能量和光学性能没有影响,但在弱吸收尾范围内,玻璃的光学响应取决于活化剂的浓度。用直接熔融法生产的玻璃的结晶也取决于活化剂的浓度。在掺杂Dy3+的玻璃中,离子的吸收带位于玻璃的弱吸收尾的范围内,使得离子和载流子的间隙态之间的能量转移成为可能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Релятивистские расчеты энергий низко возбужденных состояний 1sns, 1snp, 1snd и вероятностей однофотонных переходов 1snl -> 1sn'l' в гелиеподобном ионе урана Генерация и тушение в XeCl-=SUP=-*-=/SUP=- эксимерном лазере при накачке смешанным гамма-нейтронным излучением ядерного реактора Формирование периодических двухфазных структур на поверхности аморфных пленок Ge-=SUB=-2-=/SUB=-Sb-=SUB=-2-=/SUB=-Te-=SUB=-5-=/SUB=- при воздействии ультракоротких лазерных импульсов различной длительности и частоты следования Влияние дополнительных монопольных выбросов электронов на зарядовые спектры конечных ионов при каскадном распаде электронных вакансий в атоме золота Применение метода абсорбционной диодной лазерной спектроскопии для измерения содержания -=SUP=-13-=/SUP=-С и -=SUP=-12-=/SUP=-С в выдыхаемом воздухе
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1