{"title":"Dummy poly removal in FinFET technology node","authors":"Ruixuan Huang, Shi-liang Ji, Qiu-hua Han","doi":"10.1109/CSTIC.2017.7919784","DOIUrl":null,"url":null,"abstract":"When CMOS technology reaches 14nm and beyond, FinFET is implemented to further improve the device performance. Dummy poly removal process works as a key process to control the work function of metal gate, threshold voltage, and gate leakage. In this paper, we compared the dry etch process on 3 different commercial tools with 2 different approaches which shows that the gate leakage could have more than an order's improvement with proper process and approach.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"89 10 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919784","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
When CMOS technology reaches 14nm and beyond, FinFET is implemented to further improve the device performance. Dummy poly removal process works as a key process to control the work function of metal gate, threshold voltage, and gate leakage. In this paper, we compared the dry etch process on 3 different commercial tools with 2 different approaches which shows that the gate leakage could have more than an order's improvement with proper process and approach.
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