Li Sheng-Hui , Lin Chia-Ping , Fang Yen-Hsiang , Kuo Wei-Hung , Wu Ming-Hsien , Chao Chu-Li , Horng Ray-Hua , Su Guo-Dung J.
{"title":"Performance analysis of GaN-based micro light-emitting diodes by laser lift-off process","authors":"Li Sheng-Hui , Lin Chia-Ping , Fang Yen-Hsiang , Kuo Wei-Hung , Wu Ming-Hsien , Chao Chu-Li , Horng Ray-Hua , Su Guo-Dung J.","doi":"10.1016/j.ssel.2019.06.001","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence caused by the differing refractive indexes of sapphire (<em>n</em> = 1.77) and GaN (<em>n</em> = 2.4). The LLO-µLEDs considerably improve light collimation, compared with conventional flip-chip µLEDs containing a sapphire substrate. We highlight, in particular, the importance of the optical characteristics before and after LLO. Collimation of light was discovered to be 12% higher after removal of the sapphire substrate. The results are of high importance for understanding the optical properties of µLED arrays after LLO.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"1 2","pages":"Pages 58-63"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2019.06.001","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208818300358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
In this study, a monochromatic GaN-based micro-light-emitting-diode (µLED) array was fabricated using flip-chip technology. The laser lift-off (LLO) process was employed to decrease the light divergence caused by the differing refractive indexes of sapphire (n = 1.77) and GaN (n = 2.4). The LLO-µLEDs considerably improve light collimation, compared with conventional flip-chip µLEDs containing a sapphire substrate. We highlight, in particular, the importance of the optical characteristics before and after LLO. Collimation of light was discovered to be 12% higher after removal of the sapphire substrate. The results are of high importance for understanding the optical properties of µLED arrays after LLO.
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