Orbital Edelstein effect in topological insulators

K. Osumi, Tiantian Zhang, S. Murakami
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引用次数: 1

Abstract

We theoretically propose a gigantic orbital Edelstein effect in topological insulators and interpret the results in terms of topological surface currents. We numerically calculate the orbital Edelstein effect for a model of a three-dimensional Chern insulator as an example. Furthermore, we calculate the orbital Edelstein effect as a surface quantity using a surface Hamiltonian of a topological insulator, and numerically show that it well describes the results by direct numerical calculation. We find that the orbital Edelstein effect depends on the local crystal structure of the surface, which shows that the orbital Edelstein effect cannot be defined as a bulk quantity. We propose that Chern insulators and Z2 topological insulators can be a platform with a large orbital Edelstein effect because current flows only along the surface. We also propose candidate topological insulators for this effect. As a result, the orbital magnetization as a response to the current is much larger in topological insulators than that in metals by many orders of magnitude.
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拓扑绝缘体中的轨道Edelstein效应
我们从理论上提出了拓扑绝缘体中的巨大轨道Edelstein效应,并从拓扑表面电流的角度解释了结果。以三维陈氏绝缘子模型为例,对其轨道Edelstein效应进行了数值计算。此外,我们利用拓扑绝缘体的表面哈密顿量计算轨道Edelstein效应作为表面量,并通过直接数值计算表明它很好地描述了结果。我们发现轨道Edelstein效应取决于表面的局部晶体结构,这表明轨道Edelstein效应不能被定义为一个体积量。我们提出Chern绝缘体和Z2拓扑绝缘体可以成为一个具有大轨道Edelstein效应的平台,因为电流只沿着表面流动。我们还提出了这种效应的候选拓扑绝缘体。结果,轨道磁化对电流的响应在拓扑绝缘体中比在金属中要大很多数量级。
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