{"title":"Generalised DC characteristics of gate-controlled diodes in avalanche breakdown regime","authors":"A. Rusu, M. Badila, C. Bulucea","doi":"10.1109/SMICND.2008.4703321","DOIUrl":null,"url":null,"abstract":"This paper considers the gate-controlled diode as a device performing both analog and digital functions. This behavior is encountered in the breakdown regime of the device, where the transfer characteristic has slopes in a wide range, from a cvasilinear to a collapse region. The form of this characteristic depends on the electrode that is considered as reference. Theoretical models and experimental measurements demonstrate these assumptions.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"14 1","pages":"27-30"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper considers the gate-controlled diode as a device performing both analog and digital functions. This behavior is encountered in the breakdown regime of the device, where the transfer characteristic has slopes in a wide range, from a cvasilinear to a collapse region. The form of this characteristic depends on the electrode that is considered as reference. Theoretical models and experimental measurements demonstrate these assumptions.
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