Investigation of Radiative Coupling from InGaAsP Quantum Wells for Improving End-of-Life (EOL) Efficiency in Multijunction Solar Cells

G. Bradshaw, M. Kacharia, E. Kessler-Lewis, D. Wilt, S. Polly, C. Mann, H. Kum, S. Hubbard
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Abstract

GaInP/(In)GaAs/Ge multijunction solar cells have been state-of-practice for power generation on spacecraft for over a decade but there are still potential improvements for endof-life (EOL) efficiency. Radiative coupling between GaInP and (In)GaAs subcells is not typically considered in the EOL design of space solar cells because radiative recombination in the GaInP is effectively quenched by radiation-induced damage. This paper shows that quantum well structures incorporated into a GaInP subcell may be less sensitive to radiation damage, thereby enabling radiative coupling between subcells at EOL and providing a current boost in the (In)GaAs subcell to improve EOL efficiency.
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InGaAsP量子阱辐射耦合提高多结太阳能电池寿命终止效率的研究
GaInP/(In)GaAs/Ge多结太阳能电池已经在航天器上进行了十多年的发电实践,但在寿命结束(EOL)效率方面仍有改进的潜力。在空间太阳能电池的EOL设计中,通常不考虑GaInP和(In)GaAs亚电池之间的辐射耦合,因为GaInP中的辐射复合被辐射引起的损伤有效地抑制了。本文表明,加入到GaInP亚电池中的量子阱结构可能对辐射损伤不太敏感,从而实现了EOL亚电池之间的辐射耦合,并在(in)GaAs亚电池中提供电流增强以提高EOL效率。
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