Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric

P. Vimala , T.S. Arun Samuel , D. Nirmal , Ajit Kumar Panda
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引用次数: 18

Abstract

In this paper, we proposed a 2 dimensional model of tripple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-junction formed by germanium and silicon materials in the source-channel junction and heterodielectric gate stack is used with Silicon Dioxide (SiO2) and Hafnium Dioxide (HfO2) as dielectric materials. The electrical characteristics like surface potential, electric field, drain current and transconductance are demonstrated for the device by using commercially available 2D numerical device simulator Silvaco TCAD ATLAS. The variation of the drain currnet or ON current with the varying channel length (L), doping concentration of drain and source (NA and ND), thickness of device (tsi) and effective oxide layer thickness (tox) of the device is evaluated and presented. It is demonstrated that the proposed TM-DG TFET structure has better performance than single material and double material TFET. The proposed model shows a lower ambipolar current and a better ION/IOFF ratio. Moreover, the influence of Germanium/Silicon hetero-junction has reduces the tunneling barrier width is exactly depicted. Hence the ON current (10−3A) of the proposed device is improved at the level of CMOS transistors.

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异质结和异质介质三重材料双栅TFET的性能增强
本文提出了一种三材料双栅隧道场效应晶体管(TM-DG TFET)的二维模型,其源沟道结由锗和硅材料构成异质结,异质介质栅极堆采用二氧化硅(SiO2)和二氧化铪(HfO2)作为介质材料。利用市售的二维数值器件模拟器Silvaco TCAD ATLAS,演示了该器件的表面电位、电场、漏极电流和跨导等电学特性。给出了漏极电流或导通电流随通道长度(L)、漏极和源极掺杂浓度(NA和ND)、器件厚度(tsi)和器件有效氧化层厚度(tox)的变化规律。结果表明,所提出的TM-DG TFET结构比单材料和双材料TFET具有更好的性能。该模型具有较低的双极电流和较好的离子/IOFF比。此外,还准确地描述了锗硅异质结对隧道势垒宽度减小的影响。因此,所提出的器件的ON电流(10−3A)在CMOS晶体管的水平上得到了改善。
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