Understanding Creep Corrosion Field Fails

Phillip Isaacs, Jing Zhang, T. Munson
{"title":"Understanding Creep Corrosion Field Fails","authors":"Phillip Isaacs, Jing Zhang, T. Munson","doi":"10.23919/PanPacific48324.2020.9059471","DOIUrl":null,"url":null,"abstract":"Dendrites, Electrochemical Migration (ECM) and parasitic leakage, are usually caused by process related contamination. For example, excess flux, poor handling, extraneous solder, fibers, to name a few. One does not normally relate these fails with environmental causes. However, creep corrosion is a mechanism by which electronic products fail in application, primarily related to sulfur pollution present in the air.1 The sulfur reacts with exposed silver, and to a lesser extent, exposed copper. This paper will explore various aspects of the creep corrosion chemical reaction: 1.What is driving the creep corrosion reaction? 2.Why is drying the product a necessary precursor to obtaining creep corrosion in tests?2, 3 3.Test methods with Flowers of Sulfur, FoS, and sulfur rich clay. 4.Discussion of creep corrosion related field fails. 5.When does creep corrosion become ECM. 6.Sources of sulfur containing pollution. 7.Methods to take to avoid creep corrosion. While there are places with sulfur containing pollution, creep corrosion will be a factor which will impact reliability. Creep corrosion will need to be understood and handled.","PeriodicalId":6691,"journal":{"name":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","volume":"28 1","pages":"1-6"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Pan Pacific Microelectronics Symposium (Pan Pacific)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/PanPacific48324.2020.9059471","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Dendrites, Electrochemical Migration (ECM) and parasitic leakage, are usually caused by process related contamination. For example, excess flux, poor handling, extraneous solder, fibers, to name a few. One does not normally relate these fails with environmental causes. However, creep corrosion is a mechanism by which electronic products fail in application, primarily related to sulfur pollution present in the air.1 The sulfur reacts with exposed silver, and to a lesser extent, exposed copper. This paper will explore various aspects of the creep corrosion chemical reaction: 1.What is driving the creep corrosion reaction? 2.Why is drying the product a necessary precursor to obtaining creep corrosion in tests?2, 3 3.Test methods with Flowers of Sulfur, FoS, and sulfur rich clay. 4.Discussion of creep corrosion related field fails. 5.When does creep corrosion become ECM. 6.Sources of sulfur containing pollution. 7.Methods to take to avoid creep corrosion. While there are places with sulfur containing pollution, creep corrosion will be a factor which will impact reliability. Creep corrosion will need to be understood and handled.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
理解蠕变腐蚀场失效
枝晶、电化学迁移(ECM)和寄生泄漏通常是由工艺污染引起的。例如,过量的助焊剂,处理不当,多余的焊料,纤维,仅举几例。人们通常不会把这些失败与环境原因联系起来。然而,蠕变腐蚀是电子产品在应用中失败的一种机制,主要与空气中存在的硫污染有关硫与暴露的银发生反应,并在较小程度上与暴露的铜发生反应。本文将探讨蠕变腐蚀化学反应的各个方面:驱动蠕变腐蚀反应的因素是什么?2.为什么干燥产品是在试验中获得蠕变腐蚀的必要前提?2 3 3。硫花、FoS和富硫粘土的试验方法。4.蠕变腐蚀相关领域失效的讨论。5.蠕变腐蚀何时成为ECM ?6.含硫污染源。7.避免蠕变腐蚀的措施。在含硫污染场所,蠕变腐蚀是影响可靠性的一个因素。蠕变腐蚀需要理解和处理。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Development of Materials Informatics Platform Technology for Optical Co-Packaging Customizable Capacitive Sensor System Using Printed Electronics on Window Glass The Heterogeneous Integration Roadmap: Enabling Technology for Systems of the Future Advanced Substrate Technology for Heterogeneous Integration
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1