Effects of Fully Filling Deep Electron/Hole Traps in Optically Stimulated Luminescence Dosimeters in the Kilovoltage Energy Range

Pub Date : 2022-10-06 DOI:10.14407/jrpr.2021.00339
M. Chun, Hyeong-min Jin, Sung Young Lee, O. Kwon, C. Choi, Jong Min Park, Jung-in Kim
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Abstract

Background: This study investigated the characteristics of optically stimulated luminescence dosimeters (OSLDs) with fully filled deep electron/hole traps in the kV energy ranges. Materials and Methods: The experimental group consisted of InLight nanoDots, whose deep electron/hole traps were fully filled with 5 kGy pre-irradiation (OSLD exp ), whereas the non-pre-irradiated OSLDs were arranged as a control group (OSLD cont ). Absorbed doses for 75, 80, 85, 90, 95, 100, and 105 kVp with 200 mA and 40 ms were measured and defined as the unit doses for each energy value. A bleaching device equipped with a 520-nm long-pass filter was used, and the strong beam mode was used to read out signal counts. The characteristics were investigated in terms of fading, dose sensitivities according to the accumulated doses, and dose linearity. Results and Discussion: In OSLD exp , the average normalized counts (sensitivities) were 12.7%, 14.0%, 15.0%, 10.2%, 18.0%, 17.9%, and 17.3% higher compared with those in OSLD cont for 75, 80, 90, 95, 100, and 105 kVp, respectively. The dose accumulation and bleaching time did not significantly alter the sensitivity, regardless of the filling of deep traps for all radiation qualities. Both OSLD exp and OSLD cont exhibited good linearity, by showing coefficients determination (R 2 ) > 0.99. The OSL sensitivities can be increased by filling of deep electron/hole traps in the energy ranges between 75 and 105 kVp, and they exhibited no significant variations according to the bleaching time.
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在千伏能量范围内充分填充深电子/空穴阱对光激发发光剂量计的影响
背景:本研究研究了在kV能量范围内充满深电子/空穴阱的光激发发光剂量计(OSLDs)的特性。材料与方法:实验组由InLight纳米点组成,其深层电子/空穴陷阱被5 kGy的预辐照(OSLD exp)完全填充,而未预辐照的OSLD作为对照组(OSLD cont)。测量了200 mA和40 ms下75、80、85、90、95、100和105 kVp的吸收剂量,并将其定义为每个能量值的单位剂量。使用配备520 nm长通滤波器的漂白装置,采用强光束模式读出信号计数。从衰减、按累积剂量计算的剂量敏感性和剂量线性等方面研究了其特性。结果与讨论:与对照相比,在75、80、90、95、100和105 kVp时,OSLD实验的平均归一化计数(敏感性)分别高出12.7%、14.0%、15.0%、10.2%、18.0%、17.9%和17.3%。无论是否填充深阱,剂量累积和漂白时间都没有显著改变所有辐射质量的敏感性。实验结果表明,溶出量与溶出量均呈良好的线性关系(r2 > 0.99)。在75 ~ 105 kVp的能量范围内填充深电子/空穴阱可以提高OSL的灵敏度,且随漂白时间的变化不显著。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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