{"title":"p-NiO/ITO transparent heterojunction — Preparation and characterization","authors":"C. C. Forin, M. Purica, E. Budianu, P. Schiopu","doi":"10.1109/SMICND.2012.6400676","DOIUrl":null,"url":null,"abstract":"The paper presents the preparation of a transparent heterojunction on glass substrate consisting of p type NiO and n type ITO transparent oxidic semiconductors. NiO layer as a p type semiconductor and transparent layer was obtained by thermal oxidation at 430 oC of 50 nm metallic Ni films deposited by DC sputtering. Spectrophotometrical measurements used to investigate optical properties revealed a transmittance higher than 70% for NiO and 90% for ITO in the spectral range of 300-900 nm. The obtained p-NiO/n-ITO heterojunction exposed to ultraviolet radiation (λ ~ 240 nm) shows a good sensibility due to wide band gap of the layers.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"7 1","pages":"131-134"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400676","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
The paper presents the preparation of a transparent heterojunction on glass substrate consisting of p type NiO and n type ITO transparent oxidic semiconductors. NiO layer as a p type semiconductor and transparent layer was obtained by thermal oxidation at 430 oC of 50 nm metallic Ni films deposited by DC sputtering. Spectrophotometrical measurements used to investigate optical properties revealed a transmittance higher than 70% for NiO and 90% for ITO in the spectral range of 300-900 nm. The obtained p-NiO/n-ITO heterojunction exposed to ultraviolet radiation (λ ~ 240 nm) shows a good sensibility due to wide band gap of the layers.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
