Relative efficiency revealed: Equations for k1–k6 of the PVGIS model

G. Yordanov
{"title":"Relative efficiency revealed: Equations for k1–k6 of the PVGIS model","authors":"G. Yordanov","doi":"10.1109/PVSC.2014.6925178","DOIUrl":null,"url":null,"abstract":"The European PV Geographical Information System (PVGIS) describes module performance in terms of the relative efficiency with respect to Standard Testing Conditions (STC). The efficiency's dependence on irradiance and operating temperature is modeled with a bi-quadratic polynomial with respect to the relative temperature and the logarithm of relative irradiance. In earlier works, the present author derived relations between two model coefficients describing the irradiance dependence at 25°C, k1 and k2, and I-V curve model parameters such as the series resistance RS and the ideality factor n. There was good agreement between the theoretical and fitted values of k1, but the fitted values of k2 were overestimated for most of the studied crystalline-silicon (c-Si) modules. The present paper derives a correction factor for k2 and equations for k3 - k6. The results are limited to the case of PV modules behaving well according to the one-exponential I-V curve model, with negligible current leakage via cell shunts. The effects of several I-V curve non-idealities on performance are discussed.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"124 1","pages":"1393-1398"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2014.6925178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

The European PV Geographical Information System (PVGIS) describes module performance in terms of the relative efficiency with respect to Standard Testing Conditions (STC). The efficiency's dependence on irradiance and operating temperature is modeled with a bi-quadratic polynomial with respect to the relative temperature and the logarithm of relative irradiance. In earlier works, the present author derived relations between two model coefficients describing the irradiance dependence at 25°C, k1 and k2, and I-V curve model parameters such as the series resistance RS and the ideality factor n. There was good agreement between the theoretical and fitted values of k1, but the fitted values of k2 were overestimated for most of the studied crystalline-silicon (c-Si) modules. The present paper derives a correction factor for k2 and equations for k3 - k6. The results are limited to the case of PV modules behaving well according to the one-exponential I-V curve model, with negligible current leakage via cell shunts. The effects of several I-V curve non-idealities on performance are discussed.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
相对效率显示:PVGIS模型的k1-k6方程
欧洲光伏地理信息系统(PVGIS)根据标准测试条件(STC)的相对效率描述了模块的性能。效率对辐照度和工作温度的依赖关系用相对温度和相对辐照度对数的双二次多项式进行了建模。在早期的工作中,作者推导了描述25°C辐照度依赖性的两个模型系数k1和k2与I-V曲线模型参数(如串联电阻RS和理想因子n)之间的关系。k1的理论值和拟合值之间有很好的一致性,但k2的拟合值对于大多数研究的晶体硅(C -si)模块来说被高估了。本文导出了k2的修正系数和k3 - k6的方程。根据单指数I-V曲线模型,该结果仅限于PV模块表现良好的情况下,通过电池分流的电流泄漏可以忽略不计。讨论了几种I-V曲线非理想性对性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Rapid characterization of extended defects in III–V/Si by electron channeling contrast imaging Transport modeling of InGaN/GaN multiple quantum well solar cells Integration of PV into the energy system: Challenges and measures for generation and load management Determination of a minimum soiling level to affect photovoltaic devices Optical emission spectroscopy of High Power Impulse Magnetron Sputtering (HiPIMS) of CIGS thin films
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1