L. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. Agee
{"title":"Solid-state power switches for HPM modulators","authors":"L. Kingsley, R. Pastore, H. Singh, G. Ayres, R. Burdalski, J. Agee","doi":"10.1109/PPC.1995.596456","DOIUrl":null,"url":null,"abstract":"Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.","PeriodicalId":11163,"journal":{"name":"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference","volume":"10 1","pages":"65-70 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1995-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. Tenth IEEE International Pulsed Power Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPC.1995.596456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Power modulators for pulsed microwave applications, generally utilizing a thyratron-switched PFN, typically produce 50-120 kV, 1-2 kA microsecond timescale pulses with sub-microsecond (/spl sim/100-200 nsec) risetimes. This paper reviews an investigation into the feasibility of utilizing certain solid-state power switches at the relatively fast speeds required for HPM modulators. Different thyristor switches, an ABB HCT and an n-type MCT, were investigated in a fast (/spl sim/136 nsec), low-impedance 1.4-/spl mu/sec PFN. Limited success was obtained, as both switches demonstrated sub-microsecond switching times. The ABB HCT switching a bias of 944 V in 220 nsec. These results indicate that thyristor switches may be fast enough for some HPM modulator applications.
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