D. Benedikovic, G. Aubin, L. Virot, J. Hartmann, F. Amar, X. Roux, C. Alonso‐Ramos, E. Cassan, D. Marris-Morini, F. Boeuf, J. Fédéli, C. Kopp, B. Szelag, L. Vivien
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Abstract
We present our latest advances in the development of compact photodetectors based on p-i-n silicon-germanium-silicon hetero-structures. We demonstrate credible high-speed performances, showing that those devices are likely to become key building blocks in next-generation photonic interconnects.
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