Critical parameters in superconductor single crystal wires of doped lead telluride

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI:10.1109/SMICND.2008.4703394

E. Zasavitsky, V. Kantser

{"title":"Critical parameters in superconductor single crystal wires of doped lead telluride","authors":"E. Zasavitsky, V. Kantser","doi":"10.1109/SMICND.2008.4703394","DOIUrl":null,"url":null,"abstract":"Influence of Tl content on superconducting characteristics of thin single crystal wires of semiconductor compound PbTe<Tl> in the temperature region 0.4 divide 4,2 K and magnetic field up to 1,2 T are investigated. Thallium average concentration variation was 0.001 divide 0.02 at %. Single crystal wires (with diameters d = 5 divide 100 mum) were obtained from solution melt by filling of quartz capillary with the following crystallization of material. It is revealed, that at low temperatures in singlecrystal wires of PbTe<Tl> transition in the superconducting state is observed. The temperature of transition correlates with impurity concentration (for singlecrystal wires of PbTe<Tl> at thallium concentration 2% Tc=2,1K). Significant peak-effect is observed in the magnetic field near HC1 and HC2. Mechanisms leading to superconducting transition and anomalous dependence of critical current vs magnetic field in the vicinity of the HC1 and HC2 are discussed. The interpretation of the obtained results is given based on model of an impurity with skipped valence and flux line lattice deformation.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"37 1","pages":"253-256"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703394","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

Influence of Tl content on superconducting characteristics of thin single crystal wires of semiconductor compound PbTe in the temperature region 0.4 divide 4,2 K and magnetic field up to 1,2 T are investigated. Thallium average concentration variation was 0.001 divide 0.02 at %. Single crystal wires (with diameters d = 5 divide 100 mum) were obtained from solution melt by filling of quartz capillary with the following crystallization of material. It is revealed, that at low temperatures in singlecrystal wires of PbTe transition in the superconducting state is observed. The temperature of transition correlates with impurity concentration (for singlecrystal wires of PbTe at thallium concentration 2% Tc=2,1K). Significant peak-effect is observed in the magnetic field near HC1 and HC2. Mechanisms leading to superconducting transition and anomalous dependence of critical current vs magnetic field in the vicinity of the HC1 and HC2 are discussed. The interpretation of the obtained results is given based on model of an impurity with skipped valence and flux line lattice deformation.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

掺碲化铅超导体单晶线的关键参数

研究了Tl含量对半导体化合物PbTe单晶细线在0.4 ~ 4.2 K温度区和高达1.2 T磁场下超导特性的影响。铊的平均浓度变化为0.001除以0.02。在石英毛细管中填充下列结晶物质，从溶液熔体中获得直径为d = 5 / 100 μ m的单晶丝。结果表明，低温下单晶线中PbTe发生了超导态转变。转变温度与杂质浓度有关(对于铊浓度为2% Tc= 2,1k的PbTe单晶线)。在HC1和HC2附近的磁场中观察到显著的峰效应。讨论了HC1和HC2附近超导跃迁的机理和临界电流对磁场的异常依赖关系。基于跳价杂质和通量线晶格变形的模型，给出了所得结果的解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2008 IEEE International Conference on Semiconductor Electronics

自引率

0.00%

发文量