Localized doping using silicon ink technology for high efficiency solar cells

K. Alberi, G. Scardera, H. Moutinho, R. Reedy, M. Romero, E. Rogojina, M. Kelman, D. Poplavskyy, D. Young, F. Lemmi, H. Antoniadis
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引用次数: 11

Abstract

Controlled localized doping of selective emitter structures via Innovalight Silicon Ink technology is demonstrated. Both secondary ion mass spectrometry and scanning capacitance microscopy reveal abrupt lateral dopant profiles at ink-printed boundaries. Uniform doping of iso- and pyramidal surfaces is also verified using scanning electron microscopy dopant contrast imaging.
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用硅墨水技术局部掺杂高效太阳能电池
通过Innovalight硅墨水技术,实现了选择性发射极结构的可控局部掺杂。二次离子质谱和扫描电容显微镜都显示了油墨印刷边界处突然的横向掺杂谱。用扫描电子显微镜的掺杂对比成像也验证了等锥体和锥体表面的均匀掺杂。
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