Doping and temperature dependence of minority carrier diffusion lengths in InGaAs/InP photodiodes

Abstract

Photodetectors and photovoltaic devices composed of direct bandgap semiconductor materials absorb visible to infrared wavelengths within a few micrometers of material. Minority carrier diffusion lengths in such materials are critical in designing these optoelectronic devices for particular applications. Minority holes in InGaAs on InP are reported between 0-100°C for doping concentrations ranging between non-intentionally doped (NID) to 5E16 cm-3. At room temperature, values range between 81±8 μm for the NID sample to 34±1 μm for 5E16 cm-3. These values appear constant over the temperature range explored, implying that lifetime and mobility balance out.