An Optocoupler Chip Design Based on BiCMOS Technology

Jun’an Zhang, Yi Xu, Cong Peng
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引用次数: 1

Abstract

An optocoupler chip is proposed in this paper based on BiCMOS process. NPN transistors are utilized as input transistors for transimpedance amplifier (TIA) and comparator to achieve low noise and low offset. Darlington composite transistor and NMOS achieve a class AB output driver circuit. The simulation results show that the optocoupler can work in the supply voltage range of 15$\sim$30V, and the peak output current can reach 2.85A. Meanwhile, with a 10$\Omega$ resistor and a 10nF capacitor in series at output, the measured rise time tr of the output signal is 60ns, the fall time tf is 67.3ns, the rise propagation delay time tPLH is 118ns, and the fall propagation delay time tPHL is 113.8ns.
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基于BiCMOS技术的光耦合器芯片设计
本文提出了一种基于BiCMOS工艺的光耦合器芯片。利用NPN晶体管作为跨阻放大器(TIA)和比较器的输入晶体管,可以实现低噪声和低偏置。达林顿复合晶体管和NMOS实现了AB类输出驱动电路。仿真结果表明,该光耦合器可在15 $\sim$ 30V的电源电压范围内工作,输出电流峰值可达2.85A。同时,在输出端串联10 $\Omega$电阻和10nF电容时,测量到输出信号的上升时间tr为60ns,下降时间tf为67.3ns,上升传播延迟时间tPLH为118ns,下降传播延迟时间tPHL为113.8ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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