Yu Kikuchi, Makoto Takahashi, T. Maeda, H. Hara, H. Arakida, H. Yamamoto, Y. Hagiwara, T. Fujita, Manabu Watanabe, T. Shimazawa, Y. Ohara, T. Miyamori, M. Hamada, Y. Oowaki
{"title":"A 222mW H.264 Full-HD decoding application processor with x512b stacked DRAM in 40nm","authors":"Yu Kikuchi, Makoto Takahashi, T. Maeda, H. Hara, H. Arakida, H. Yamamoto, Y. Hagiwara, T. Fujita, Manabu Watanabe, T. Shimazawa, Y. Ohara, T. Miyamori, M. Hamada, Y. Oowaki","doi":"10.1109/ISSCC.2010.5433906","DOIUrl":null,"url":null,"abstract":"Today's multimedia mobile devices must support a wide range of multimedia applications in addition to full high-definition (Full-HD) video processing. Conventional hardware engine approaches [1-3] cannot handle new applications that may be required once the chips are fabricated. We report an application processor with a hybrid architecture that combines a software solution with a multi-core processor [4] for various applications and a hardware solution with hardware engines for low-power and specific high-performance tasks such as Full-HD video and 3D graphics. Another issue faced in multimedia mobile devices is to achieve high memory bandwidth with low power consumption. DDR memory connections in System-in-Package (SiP) technologies need a large number of I/Os or high interface frequency at the expense of high power consumption. A Chip-on-Chip (CoC) connection using micro-bumps [5] is a power-efficient technology to achieve high memory bandwidth and low power. However, in the case of the conventional CoC technique, customized DRAM chips are necessary, because wiring between a logic chip and a DRAM chip is implemented on the metal layers in the DRAM chip. To use a DRAM chip for multiple logic LSIs, the Stacked-Chip SoC (SCS) technology used for this application processor enables rewiring at the assembly/packaging phase using minimum 5µm-pitch metal wiring on the Re-Distribution Layer (RDL). We also report an on-chip power switch with a simple structure that inhibits rush currents. The application processor has 25 power domains and controls these domains finely to optimize for various ranges of performance requirements.","PeriodicalId":6418,"journal":{"name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","volume":"1 1","pages":"326-327"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2010.5433906","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16
Abstract
Today's multimedia mobile devices must support a wide range of multimedia applications in addition to full high-definition (Full-HD) video processing. Conventional hardware engine approaches [1-3] cannot handle new applications that may be required once the chips are fabricated. We report an application processor with a hybrid architecture that combines a software solution with a multi-core processor [4] for various applications and a hardware solution with hardware engines for low-power and specific high-performance tasks such as Full-HD video and 3D graphics. Another issue faced in multimedia mobile devices is to achieve high memory bandwidth with low power consumption. DDR memory connections in System-in-Package (SiP) technologies need a large number of I/Os or high interface frequency at the expense of high power consumption. A Chip-on-Chip (CoC) connection using micro-bumps [5] is a power-efficient technology to achieve high memory bandwidth and low power. However, in the case of the conventional CoC technique, customized DRAM chips are necessary, because wiring between a logic chip and a DRAM chip is implemented on the metal layers in the DRAM chip. To use a DRAM chip for multiple logic LSIs, the Stacked-Chip SoC (SCS) technology used for this application processor enables rewiring at the assembly/packaging phase using minimum 5µm-pitch metal wiring on the Re-Distribution Layer (RDL). We also report an on-chip power switch with a simple structure that inhibits rush currents. The application processor has 25 power domains and controls these domains finely to optimize for various ranges of performance requirements.