Electron transport properties of indium oxide – indium nitride metal‐oxide‐semiconductor heterostructures

Abstract

The structural, chemical and electron transport properties of In2O3/InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface oxide layer. The epitaxial In2O3/InN heterojunctions show an increase in the electron concentration due to the increasing band banding at the heterointerface. The oxidation of InN results in improved transport properties and in a reduction of the sheet carrier concentration of the InN epilayer very likely caused by a passivation of surface donors. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)