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Influence of the magnetron power on the Er-related photoluminescence of AlN:Er films prepared by magnetron sputtering 磁控功率对磁控溅射制备的AlN:Er薄膜Er相关光致发光的影响
Pub Date : 2019-09-13 DOI: 10.1002/pssc.200982606
S. S. Hussain, V. Brien, H. Rinnert, P. Pigeat
The effect of magnetron power on the room temperature 1.54 μm infra-red photoluminescence intensity of erbium doped AlN films grown by r.f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 at%). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
研究了磁控功率对射频磁控溅射法制备掺铒AlN薄膜室温1.54 μm红外发光强度的影响。在(001)硅衬底上沉积了AlN:Er薄膜。研究了在相同溅射参数下制备的两种掺铒水平(0.5%和1.5% at%)的纳米晶样品的相对光致发光强度。通过透射电子显微镜观察晶体结构随功率的变化。(©2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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引用次数: 4
Ellipsometric and X‐Ray Spectrometric Investigation of Fibrinogen Protein Layers 纤维蛋白原蛋白层的椭圆偏振和X射线光谱研究
Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700210
B. Kalas, B. Pollakowski, A. Nutsch, C. Streeck, J. Nádor, M. Fried, B. Beckhoff, P. Petrik
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引用次数: 1
Strain and Compositional Analysis of (Si)Ge Fin Structures Using High Resolution X‐Ray Diffraction 用高分辨率X射线衍射分析(Si)Ge翅片结构的应变和成分
Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700156
A. Schulze, R. Loo, L. Witters, H. Mertens, A. Gawlik, N. Horiguchi, N. Collaert, M. Wormington, P. Ryan, W. Vandervorst, M. Caymax
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引用次数: 6
Construction of the Energy Band Diagram of Hydrogen Terminated Diamond and Silicon Nanowires 氢端金刚石和硅纳米线能带图的构建
Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700152
S. Challinger, I. Baikie, A. G. Birdwell, S. Strehle
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引用次数: 2
Use of Rayleigh-Rice Theory for Analysis of Ellipsometry Data on Rough CIGS Films 用瑞利-赖斯理论分析粗CIGS薄膜的椭偏数据
Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700217
S. Jensen, D. Rosu, A. Hertwig, P. Hansen
Ellipsometry is a useful tool for studying the optical properties of thin films such as photovoltaic devices. We employ Muller matrix ellipsometry to study the thin film photovoltaic material copper indium gallium selenide Cu(In,Ga) Se2 (CIGS), a commercially relevant material with high energy conversion efficiency. Confocal microscopy reveals an rms roughness of 68 nm, which greatly affects the ellipsometry data. Rayleigh-Rice theory is employed to account for the optical properties of the surface roughness in the ellipsometry experiment, and a library search method is used to compare Muller parameters calculated for various CIGS compositions, to the measured data. The Muller parameters calculated with the Rayleigh-Rice model are found to correspond well with the measured data, and a surface roughness of 37nm and a correlation length of 125nm are extracted.
椭偏仪是研究光电器件等薄膜光学特性的有效工具。利用Muller矩阵椭偏法研究了铜铟镓硒化Cu(In,Ga) Se2 (CIGS)薄膜光伏材料,这是一种具有高能量转换效率的商业相关材料。共聚焦显微镜显示rms粗糙度为68 nm,这对椭偏测量数据有很大影响。采用瑞利-赖斯理论解释了椭偏实验中表面粗糙度的光学性质,并采用库检索方法将不同CIGS成分的Muller参数计算值与实测数据进行了比较。利用Rayleigh-Rice模型计算得到的Muller参数与实测数据吻合较好,提取的表面粗糙度为37nm,相关长度为125nm。
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引用次数: 2
Proceedings of the 2017 E‐MRS Spring Meeting Symposium P Silicon & Silicon Nanostructures: From Recent Fundamental Research to Novel Applications 2017年E - MRS春季会议论文集P硅和硅纳米结构:从最近的基础研究到新的应用
Pub Date : 2017-12-01 DOI: 10.1002/pssc.201720016
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引用次数: 0
Nanoscale Mapping of Semi‐Crystalline Polypropylene 半结晶聚丙烯的纳米尺度制图
Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700153
K. Abrams, Q. Wan, Nicola Stehling, C. Jiao, A. Talari, I. Rehman, C. Rodenburg
We reveal nanoscale information of semi-crystalline polypropylene with the use of a new secondary electron hyperspectral imaging technique. The innovative combination of cryo-SEM and low voltage allows for the optimized imaging of these beam-sensitive materials. Through the collection of secondary electron hyperspectral imaging data, mapping of molecular order on the nano-scale in the scanning electron microscope (SEM) can be achieved.
我们利用一种新的二次电子高光谱成像技术揭示了半结晶聚丙烯的纳米级信息。低温扫描电镜和低电压的创新组合允许这些光束敏感材料的优化成像。通过收集二次电子高光谱成像数据,可以在扫描电子显微镜(SEM)中实现分子秩序的纳米尺度映射。
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引用次数: 4
Effect of Cooling Rate on Dopant Spatial Localization and Phase Transformation in Cu‐Doped Y‐Stabilized ZrO2 Nanopowders 冷却速率对Cu掺杂Y稳定ZrO2纳米粉体中掺杂物空间定位和相变的影响
Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700183
N. Korsunska, M. Baran, I. Vorona, V. Nosenko, S. Lavoryk, Yu. O. Polishchuk, V. Kladko, X. Portier, L. Khomenkova
The effect of calcination temperature (TC = 500–1000 °C) and cooling rate on the dopant distribution in Cu‐doped Y‐stabilized ZrO2 nanopowders is studied. The powders are produced by co‐precipitation technique and investigated by attenuated total reflection, UV‐vis diffuse reflectance, electron paramagnetic resonance, and transmission electron microscopy methods. The cooling rate is found to affect the amount of Cu substances on grain surface, the powders subjected to fast cooling (quenching) showed higher amount of Cu‐related complexes on the grains’ surface than their counterparts cooled with furnace after calcination. It is observed that Cu impurities diffuse inside ZrO2 grains from Cu‐related surface substances when TC   800 °C, outward migration of Cu dopants takes place. Simultaneously, the intensity of 275‐nm absorption band decreases, the monoclinic ZrO2 phase forms and its contribution rises with TC. It is proposed that monoclinic phase formation is caused by the replacement of Cu atoms from lattice sites to interstitials leading to an appearance of the channels for Y out‐diffusion via cation vacancies and destabilization of ZrO2 tetragonal phase.
研究了煅烧温度(TC = 500 ~ 1000℃)和冷却速率对Cu掺杂Y稳定ZrO2纳米粉体中掺杂物分布的影响。粉末采用共沉淀法制备,并通过衰减全反射、UV - vis漫反射、电子顺磁共振和透射电镜等方法进行了研究。研究发现,冷却速度对晶粒表面Cu物质的含量有影响,快速冷却(淬火)的粉末在晶粒表面的Cu相关配合物含量高于煅烧后用电炉冷却的粉末。当温度为800℃时,Cu杂质从Cu相关表面物质扩散到ZrO2晶粒内部,Cu掺杂剂发生向外迁移。同时,275 nm吸收带强度降低,形成单斜相ZrO2,其贡献随温度升高而增大。单斜相的形成是由于Cu原子从晶格位置取代到间隙导致Y通过阳离子空位扩散的通道的出现和ZrO2四方相的不稳定。
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引用次数: 2
Carrier Multiplication in Silicon Nanocrystals:Theoretical Methodologies and Role of the Passivation 硅纳米晶体中的载流子倍增:理论方法和钝化的作用
Pub Date : 2017-12-01 DOI: 10.1002/pssc.201700198
I. Marri, M. Govoni, S. Ossicini
Carrier multiplication is a non-radiative recombination mechanism that leads to the generation of two or more electron-hole pairs after absorption of a single photon. By reducing the occurrence of dissipative effects, this process can be exploited to increase solar cell performance. In this work we introduce two different theoretical fully ab-initio tools that can be adopted to study carrier multiplication in nanocrystals. The tools are described in detail and compared. Subsequently we calculate carrier multiplication lifetimes in H- and OH- terminated silicon nanocrystals, pointed out the role played by the passivation on the carrier multiplication processes.
载流子倍增是一种非辐射复合机制,在吸收单个光子后产生两个或多个电子-空穴对。通过减少耗散效应的发生,这一过程可以用来提高太阳能电池的性能。在这项工作中,我们介绍了两种不同的理论完全从头算工具,可以用来研究纳米晶体中的载流子倍增。对这些工具进行了详细的描述和比较。随后,我们计算了H端和OH端硅纳米晶体中的载流子增殖寿命,指出了钝化对载流子增殖过程的影响。
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引用次数: 2
Low‐k Spacers for 22 nm FDSOI Technology 用于22nm FDSOI技术的低k间隔器
Pub Date : 2017-12-01 DOI: 10.1002/PSSC.201700196
F. Koehler, Bianca Antonioli, D. Triyoso, H. Tao, K. Hempel
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引用次数: 1
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Physica Status Solidi (c)
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