{"title":"Study of boron nitride thin films for ultraviolet-sensor applications","authors":"Nisar Ahmad , David Lichtman","doi":"10.1016/0250-6874(89)87045-3","DOIUrl":null,"url":null,"abstract":"<div><p>A study is carried out to evaluate the ability of boron nitride thin films to act as ultraviolet - sensitive semiconductors. Boron nitride thin films are sputter deposited from a BN target in Ar, Ar/N<sub>2</sub> and N<sub>2</sub> discharges. Inter-digital electrodes of various geometries and varying spacing are laid out photolithographically. Results of <em>I</em>(dark) <em>verus</em> voltage and <em>I</em>(u.v.) <em>versus V</em> in the temperature range −40 °C to 80°C are presented here. Preliminary studies on the effect of doping boron nitride films with aluminum and zinc impurities do not yield significant results.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"18 3","pages":"Pages 397-405"},"PeriodicalIF":0.0000,"publicationDate":"1989-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87045-3","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0250687489870453","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A study is carried out to evaluate the ability of boron nitride thin films to act as ultraviolet - sensitive semiconductors. Boron nitride thin films are sputter deposited from a BN target in Ar, Ar/N2 and N2 discharges. Inter-digital electrodes of various geometries and varying spacing are laid out photolithographically. Results of I(dark) verus voltage and I(u.v.) versus V in the temperature range −40 °C to 80°C are presented here. Preliminary studies on the effect of doping boron nitride films with aluminum and zinc impurities do not yield significant results.
研究了氮化硼薄膜作为紫外敏感半导体材料的性能。在氩气、氩气/氮气和氮气放电条件下，从氮化硼靶上溅射沉积氮化硼薄膜。不同几何形状和不同间距的数字间电极采用光刻法布置。在- 40°C到80°C的温度范围内，给出了I(暗)vs电压和I(uv) vs V的结果。对氮化硼薄膜中掺杂铝和锌杂质的影响进行了初步研究，并没有得到显著的结果。
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