{"title":"Modeling of the Adsorption Kinetics and the Convection of Surfactants in a Weld Pool","authors":"M. Do-Quang, G. Amberg, C. Pettersson","doi":"10.1115/1.2946476","DOIUrl":null,"url":null,"abstract":"This paper presents a comprehensive three-dimensional, time-dependent model for simulating the adsorption kinetics and the redistribution of surfactants at the surface and in the bulk of a weld pool. A physicochemical approach that was included in this paper allows the surfactant concentration at the surface and in the bulk to depart from its thermodynamical equilibrium. The Langmuir equilibrium adsorption ratio was based on the k(seg) coefficient of Sahoo (1988, \"Surface-Tension of Binary Metal-Surface-Active Solute Systems Under Conditions Relevant to Welding Metallurgy,\" Metall. Trans. B, 19B, pp. 483-491) and was finally used for calculating fluid flow and heat transfer in gas tungsten arc welding of a super duplex stainless steel, SAF 2507. In this study, the authors applied the multicomponent surfactant mass transfer model to investigate the effect of the influence of sulfur and oxygen redistribution in welding of a super duplex stainless steel.","PeriodicalId":15937,"journal":{"name":"Journal of Heat Transfer-transactions of The Asme","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2008-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Heat Transfer-transactions of The Asme","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1115/1.2946476","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, MECHANICAL","Score":null,"Total":0}
引用次数: 11
Abstract
This paper presents a comprehensive three-dimensional, time-dependent model for simulating the adsorption kinetics and the redistribution of surfactants at the surface and in the bulk of a weld pool. A physicochemical approach that was included in this paper allows the surfactant concentration at the surface and in the bulk to depart from its thermodynamical equilibrium. The Langmuir equilibrium adsorption ratio was based on the k(seg) coefficient of Sahoo (1988, "Surface-Tension of Binary Metal-Surface-Active Solute Systems Under Conditions Relevant to Welding Metallurgy," Metall. Trans. B, 19B, pp. 483-491) and was finally used for calculating fluid flow and heat transfer in gas tungsten arc welding of a super duplex stainless steel, SAF 2507. In this study, the authors applied the multicomponent surfactant mass transfer model to investigate the effect of the influence of sulfur and oxygen redistribution in welding of a super duplex stainless steel.
本文提出了一个全面的三维，时间相关的模型来模拟吸附动力学和表面活性剂的重新分配在表面和焊接池的主体。本文所采用的物理化学方法允许表面活性剂浓度在表面和体中偏离其热力学平衡。Langmuir平衡吸附比基于Sahoo(1988)的k(seg)系数，“与焊接冶金有关的条件下二元金属-表面活性溶质体系的表面张力”，metal。反式。B, 19B, pp. 483-491)，最后用于计算超级双相不锈钢(SAF 2507)的气体钨极弧焊中的流体流动和传热。本文采用多组分表面活性剂传质模型，研究了硫氧重分布对超级双相不锈钢焊接过程的影响。
期刊介绍：
Topical areas including, but not limited to: Biological heat and mass transfer; Combustion and reactive flows; Conduction; Electronic and photonic cooling; Evaporation, boiling, and condensation; Experimental techniques; Forced convection; Heat exchanger fundamentals; Heat transfer enhancement; Combined heat and mass transfer; Heat transfer in manufacturing; Jets, wakes, and impingement cooling; Melting and solidification; Microscale and nanoscale heat and mass transfer; Natural and mixed convection; Porous media; Radiative heat transfer; Thermal systems; Two-phase flow and heat transfer. Such topical areas may be seen in: Aerospace; The environment; Gas turbines; Biotechnology; Electronic and photonic processes and equipment; Energy systems, Fire and combustion, heat pipes, manufacturing and materials processing, low temperature and arctic region heat transfer; Refrigeration and air conditioning; Homeland security systems; Multi-phase processes; Microscale and nanoscale devices and processes.
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